FDC6305N
Manufacturer:
On Semiconductor
Mfr.Part #:
FDC6305N
Datasheet:
Description:
MOSFETs TSOT-23-6 SMD/SMT N-Channel number of channels:2 900 mW 20 V Continuous Drain Current (ID):2.7 A 5 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 20 V |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 80 mΩ |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | 419AGâ01 |
| REACH SVHC | No SVHC |
| Weight | 0.036 g |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | 2.7 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 960 mW |
| Power Dissipation | 900 mW |
| Threshold Voltage | 900 mV |
| Number of Channels | 2 |
| Input capacitance | 310 pF |
| Continuous Drain Current (ID) | 2.7 A |
| Rds On Max | 80 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 11 ns |
| Element Configuration | Dual |
| Rise Time | 8.5 ns |
| Dual Supply Voltage | 20 V |
| Gate Charge | 5 nC |
| Drain to Source Resistance | 60 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 400 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 2
Distributors
pcbx
pcbxUnit Price$0.63590
Ext.Price$0.63590
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.63590 | $0.63590 |
| 10 | $0.53011 | $5.30110 |
| 25 | $0.49394 | $12.34850 |
| 50 | $0.46024 | $23.01200 |
| 100 | $0.42884 | $42.88400 |
| 300 | $0.41242 | $123.72600 |
| 500 | $0.39663 | $198.31500 |
| 1000 | $0.33659 | $336.59000 |